Spin Injection into a Graphene Thin Film at Room Temperature
نویسندگان
چکیده
منابع مشابه
Room-temperature spin injection from Fe into GaAs.
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
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Spin injection, manipulation and detection are the integral parts of spintronics devices and have attracted tremendous attention in the last decade. It is necessary to judiciously choose the right combination of materials to have compatibility with the existing semiconductor technology. Conventional metallic magnets were the first choice for injecting spins into semiconductors in the past. Here...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2007
ISSN: 0021-4922
DOI: 10.1143/jjap.46.l605